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Metadata for 'Long lifetime hole traps at grain boundaries in CdTe thin-film photovoltaics' Open Access
A novel time-resolved cathodoluminescence method, where a pulsed electron beam is generated via the photoelectric effect, is used to probe individual CdTe grain boundaries. Excitons have a short lifetime (100 ps) within the grains and are rapidly quenched at the grain boundary. However, a ~47 meV shallow acceptor, believed to be due to oxygen, can act as a long lifetime hole trap, even at the grain boundaries where their concentration is higher. This provides direct evidence supporting recent observations of hopping conduction across grain boundaries in highly doped CdTe at low temperature.
Descriptions
- Resource type
- Dataset
- Contributors
- Creator:
Mendis, Budhika
1
Contact person: Mendis, Budhika 1
1 Durham University, UK
- Funder
-
Engineering and Physical Sciences Research Council
- Research methods
-
Time resolved cathodoluminescence
- Other description
- Keyword
- carrier lifetime
grain boundaries
cathodoluminescence
- Subject
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Thin-film photovoltaics
- Location
- Language
- Cited in
- 10.1103/PhysRevLett.115.218701
- Identifier
- doi:10.15128/j3860693n
ark:/32150/j3860693n
- Rights
- All rights reserved All rights reserved
- Publisher
-
Durham University
- Date Created
File Details
- Depositor
- B.G. Mendis
- Date Uploaded
- 2 October 2015, 10:10:42
- Date Modified
- 17 May 2016, 14:05:12
- Audit Status
- passing
- Characterization
-
File format: vnd.oasis.opendocument.text (OpenDocument Text)
Mime type: application/vnd.oasis.opendocument.text
File size: 94850893
Last modified: 2015:12:16 14:04:57+00:00
Filename: Meta data.zip
Original checksum: bf1385589494de2396aef0b82c4af99b