>> Meta data description for Mendis et al 'The effects of junction interdiffusion and 
misfit dislocations on the efficiency of highly mismatched heterojunction photovoltaic devices'

* There are two Excel spreadsheets containing the output from the simulations:

(1) Sulfur profiles.xlsx

>>This file contains data for the sulfur concentration (in at%) as a function of distance (in micrometers)
from the CdS-CdTe interface (zero distance is the CdS-CdTe boundary and therefore 50 at% sulfur).
The first column is the distance and columns two to seven are the sulfur concentrations for annealing times of 10, 100,
200, 300, 400 and 500 mins respectively. In all cases the annealing temperature is 525 degrees Celsius.

(2) Device parameters.xlsx

>>The file contains the device parameter values extracted from simulated J-V curves. Parameters are tabulated as a
function of annealing time at 525 degree Celsius. The corresponding sulfur diffusion profiles are as given in the
previous file. The units of each parameter are indicated in the heading (e.g. Amperes per square centimeter for
the short circuit current density etc). 
